A Novel TMOSFET Ternary Inverter Based on Hybrid Conduction Mechanism

With the continuous development of CMOS technology, feature size MOSFETs is continuously shrunk, short channel effects become more and serious, which makes static power consumption increase now becomes main source integrated circuits. At present, performance binary logic processors nearly reaching bottleneck; therefore study ternary a research hotspot to promote high low Compared with logic, possesses stronger data expression ability, can not only improve density, but also reduce circuit system complexity. However, using devices build circuits requires large number components, even passive cannot exploit advantages logic. The other method implementing through utilization innovative two-dimensional materials. This small components obviates need for it faces problem that fabrication process mature can’t be mass-produced. To solve these issues, this paper combines tunneling drift diffusion mechanism, proposed metal-oxide-semiconductor field-effect transistor (TMOSFET) three-state characteristics make highly suitable design. schemes, inverter based on TMOSFET has same structure inverter, simplify In paper, operational mechanism studied, condition output analyzed. It found when operating voltage VDD device turning <i>V</i><sub>turn</sub> satisfy <i>V</i><sub>DD</sub>/<i>V</i><sub>turn</sub>≈1.4, input ranges three states are equivalent. addition, impact transfer characteristic certain reference significance future design